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| TS13002A High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 0.3A 1.5V @ IC / IB = 200mA / 20mA Features High Voltage High Speed Switching Block Diagram Structure Silicon Triple Diffused Type NPN Silicon Transistor Ordering Information Part No. TS13002ACT B0 TS13002ACT B0G TS13002ACT A3 TS13002ACT A3G Package TO-92 TO-92 TO-92 TO-92 Packing 1Kpcs / Bulk 1Kpcs / Bulk 2Kpcs / Ammo 2Kpcs / Ammo Note: "G" denote for Green Product Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range DC Pulse Symbol VCBO VCEO VEBO IC PD TJ TSTG Limit 700V 400V 9 0.3 0.5 0.6 +150 - 55 to +150 Unit V V V A W o o C C Thermal Performance Parameter Junction to Ambient Thermal Resistance Symbol RJA Limit 122 Unit o C/W 1/5 Version: B07 TS13002A High Voltage NPN Transistor Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage IC = 1mA, IB = 0 IC = 10mA, IE = 0 IE = 1mA, IC = 0 VCB = 700V, IE = 0 VEB = 7V, IC = 0 IC / IB = 50mA / 10mA IC / IB = 100mA / 10mA IC / IB = 200mA / 20mA Base-Emitter Saturation Voltage IC / IB = 50mA / 10mA IC / IB = 100mA / 10mA VCE = 10V, IC = 10mA DC Current Gain Dynamic Frequency Output Capacitance VCE = 10V, IC = 0.1A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 100mA, IB1 = IB2 = 20mA, tp = 25uS Duty Cycle 1% fT Cob 4 --21 --MHz pF VCE = 10V, IC = 100mA VCE = 10V, IC = 280mA BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 VBE(SAT)1 VBE(SAT)2 hFE1 hFE2 hFE3 700 400 9 -------15 25 12 -----0.2 0.45 1 --------1 1 0.4 1 1.5 1 1.2 40 40 24 V V V V V uA uA Conditions Symbol Min Typ Max Unit Resistive Load Switching Time (Ratings) Rise Time Storage Time Fall Time tr tSTG tf ---1.1 2 0.2 -4 0.7 uS uS uS Note : pulse test: pulse width 5mS, duty cycle 10% 2/5 Version: B07 TS13002A High Voltage NPN Transistor Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted) Figure 1. Static Characteristics Figure 2. DC Current Gain Figure 3. VCE(SAT) v.s. VBE(SAT Figure 4. Power Derating Figure 5. Reverse Bias SOA Figure 6. Safety Operating Area 3/5 Version: B07 TS13002A High Voltage NPN Transistor TO-92 Mechanical Drawing DIM A B C D E F G H TO-92 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.30 4.70 0.169 0.185 4.30 4.70 0.169 0.185 14.30(typ) 0.563(typ) 0.43 0.49 0.017 0.019 2.19 2.81 0.086 0.111 3.30 3.70 0.130 0.146 2.42 2.66 0.095 0.105 0.37 0.43 0.015 0.017 Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) L = Lot Code 4/5 Version: B07 TS13002A High Voltage NPN Transistor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 5/5 Version: B07 |
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